Knowm Self Directed Channel memristors with tungsten dopant (W+SDC) in 8x8 crossbar configuration encapsulated in optically clear resin on a DIP 16 package.
For more information about the device properties and precautions to take while working with our memristors download the Knowm Memristors Data Sheet.
Clear resin encapsulate is not suitable for sustained high temperatures. For high temperatures please request a high temperature (black) epoxy encapsulate.
For more information please visit our sister site: knowm.org/memristors
The first time a device is operated after fabrication the self-directed channel is formed during application of a positive potential to the top electrode. The potential required for this operation is typically the same as required during normal device operation. This first operation generates Sn ions from the SnSe layer and forces them into the ‘active’ Ge2Se3 layer, where they undergo a chemical reaction. During this reaction, the glass network is distorted to provide conductive channels for the movement of Ag+ during device operation. The resistance is tunable in the lower and higher directions by movement of Ag into or away from these channels through application of either a positive or negative potential, respectively, across the device. Knowm memristors are Ag+ ion SDC memristor where the active layer has been doped to enhance and optimize the memristors properties.